Patent · US Active

Semiconductor device having a thin semiconductor die

US11605599B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Gruber · Graz, AT
Benjamin Bernard · Karlsruhe, DE
Tobias Polster · Villach, AT
Carsten von Koblinski · Velden am Wörther See, AT

Key dates

Filing date	Oct 15, 2020
Grant date	Mar 14, 2023
Priority date	—
Expiry date	Feb 12, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/6834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor die having a front side surface, a backside surface opposite the front side surface and side faces. A backside metallization layer is deposited over the backside surface and projects laterally outwards beyond the side faces. A side face protection layer covers the side faces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.