Semiconductor memory device and manufacturing method thereof
US11605643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2021 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Apr 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
Abstract
A semiconductor memory device according to an embodiment includes a semiconductor substrate, a first insulating layer, a second insulating layer, the first insulating layer between the semiconductor substrate and the second insulating layer, a semiconductor layer between the first insulating layer and the second insulating layer, the semiconductor layer extending in a first direction parallel to a surface of the semiconductor substrate, a gate electrode layer extending in a direction perpendicular to the surface; a first insulating film between the semiconductor layer and the gate electrode layer, a second insulating film between the first insulating film and the gate electrode layer the second insulating film in contact with the first insulating layer and the second insulating layer, a polycrystalline silicon region between the first insulating film and the second insulating film; and a metal film between the polycrystalline silicon region and the second insulating film containing titanium and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.