Gate structure with desired profile for semiconductor devices
US11605719B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Feb 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.