Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiC
US11605751B2 · kind B2 · utility
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Key dates
| Filing date | Jun 10, 2021 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Jun 10, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.