Extreme ultraviolet mask absorber materials
US11609490B2 · kind B2 · utility
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19References
20Claims
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Key dates
| Filing date | Oct 6, 2020 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Jul 10, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/54
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.