Method of processing a semiconductor wafer, semiconductor wafer, and semiconductor die produced from a semiconductor wafer
US11610817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2021 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Jul 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor wafer includes: forming a first metal layer or metal layer stack on a backside of the semiconductor wafer; forming a plating preventative layer on the first metal layer or metal layer stack, the plating preventative layer being formed at least over a kerf region of the semiconductor wafer and such that part of the first metal layer or metal layer stack is uncovered by the plating preventative layer, wherein the kerf region defines an area for dividing the semiconductor wafer along the kerf region into individual semiconductor dies; and plating a second metal layer or metal layer stack on the part of the first metal layer or metal layer stack uncovered by the plating preventative layer, wherein the plating preventative layer prevents plating of the second metal layer or metal layer stack over the kerf region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.