Through-circuit vias in interconnect structures
US11616002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.