Patent · US Active

Method for producing a nitride compound semiconductor component

US11616164B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Philipp Drechsel · Regensburg, DE
Werner Bergbauer · Windberg, DE
Thomas Lehnhardt · Regensburg, DE
Jürgen Off · Regensburg, DE
Joachim Hertkorn · Neukirchen, DE

Key dates

Filing date	Jan 17, 2019
Grant date	Mar 28, 2023
Priority date	—
Expiry date	Nov 8, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/815
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.