Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
US11616192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Apr 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.