Etching method
US11616194B2 · kind B2 · utility
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1References
8Claims
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Key dates
| Filing date | Mar 15, 2019 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Aug 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.