Imaging element, laminated imaging element, and solid-state imaging device
US11621290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2018 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Jan 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.