Patent · US Active

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

US11621330B2 · kind B2 · utility

0Cited by

3References

6Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Andreas Sattler · Trostberg, DE
Alexander Vollkopf · Burghausen, DE
Karl Mangelberger · Ach, AT

Key dates

Filing date	Jun 8, 2022
Grant date	Apr 4, 2023
Priority date	—
Expiry date	Jun 8, 2042

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3;a resistivity of the substrate wafer of not less than 5 mΩcm and not more than 10 mΩcm; andthe potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.