Compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate
US11626283B2 · kind B2 · utility
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12References
5Claims
0Family size
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Key dates
| Filing date | Jan 20, 2022 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Jan 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.