Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
US11626318B2 · kind B2 · utility
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11References
35Claims
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Key dates
| Filing date | Apr 19, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Jun 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.