Semiconductor structure with one or more support structures
US11626371B2 · kind B2 · utility
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3References
19Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 28, 2020 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Dec 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One or more semiconductor structures and/or methods for forming support structures for semiconductor structures are provided. A first porosification layer is formed over a semiconductor substrate. A first epitaxial layer is formed over the first porosification layer. A second porosification layer is formed from a first portion of the first epitaxial layer and a support structure is formed from a second portion of the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.