Patent · US Active

Method of manufacturing semiconductor devices and corresponding semiconductor device

US11626379B2 · kind B2 · utility

0Cited by

1References

21Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Roberto Tiziani · Milano, IT
Guendalina CATALANO · Augusta, IT

Key dates

Filing date	Mar 11, 2021
Grant date	Apr 11, 2023
Priority date	—
Expiry date	Mar 11, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15153
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.