Patent · US Active

Process and device for low-temperature pressure sintering

US11626383B2 · kind B2 · utility

0Cited by

6References

3Claims

0Family size

Assignee

DANFOSS SILICON POWER GMBH · DE

Inventors

Ronald Eisele · Surendorf, DE
Holger Ulrich · Nortorf, DE

Key dates

Filing date	Dec 18, 2020
Grant date	Apr 11, 2023
Priority date	—
Expiry date	Mar 1, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2203/1157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.