Magnetic memory device with ruthenium diffusion barrier
US11626451B2 · kind B2 · utility
0Cited by
3References
23Claims
0Family size
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Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Aug 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.