Integrated circuit device having fin-type active
US11626503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Sep 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.