Multi terminal device stack formation methods
US11626559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Jun 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.