Patent · US Active

Reflective mask and fabricating method thereof

US11630386B2 · kind B2 · utility

0Cited by

14References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Tsiao-Chen Wu · Hsinchu, TW
Pei-Cheng Hsu · Taipei, TW

Key dates

Filing date	Jan 19, 2022
Grant date	Apr 18, 2023
Priority date	—
Expiry date	Jan 19, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/82
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.