Model calibration and guided metrology based on smart sampling
US11630396B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 24, 2019 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Jul 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for calibrating a process model of a patterning process. The method includes identifying a portion of the substrate that has values within a tolerance band of one or more parameters (e.g., CD, EPE, etc.) of the patterning process, obtaining, via a metrology tool, metrology data corresponding to the portion of the substrate, processing the metrology data, and calibrating a process model based on the processed metrology data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.