Method of fabricating self-aligned via structures
US11631639B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2022 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Feb 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewall of the conductive etch stop layer, and a sidewall of the contact via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.