Transistor having blocks of source and drain silicides near the channel
US11631739B2 · kind B2 · utility
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1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2019 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Jan 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0912
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a transistor includes producing on a substrate provided with a semiconductor surface layer in which an active area can be formed, a gate block arranged on the active area. Lateral protection areas are formed against lateral faces of the gate block. Source and drain regions based on a metal material-semiconductor material compound are formed on either side of the gate and in the continuation of a portion located facing the gate block. Insulating spacers are formed on either side of the gate resting on the regions based on a metal material-semiconductor material compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.