Semiconductor device
US11631766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2021 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | May 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, a first oxide layer, a field plate, and a second oxide layer. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure respectively. The first oxide layer includes a first portion disposed between the gate structure and the semiconductor substrate and a second portion disposed between the gate structure and the drain region. The field plate is partly disposed above the gate structure and partly disposed above the second portion of the first oxide layer. The second oxide layer includes a first portion disposed between the field plate and the gate structure and a second portion disposed between the field plate and the second portion of the first oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.