Patent · US Active

Radiation-emitting semiconductor chip

US11631783B2 · kind B2 · utility

1Cited by
28References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2021
Grant dateApr 18, 2023
Priority date
Expiry dateSep 21, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.