Radiation-emitting semiconductor chip
US11631783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2021 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Sep 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.