Patterned silicide structures and methods of manufacture
US11631807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2021 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Aug 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.