Patent · US Active

Resist underlying film forming composition

US11635692B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

NISSAN CHEMICAL CORPORATION · JP

Inventors

Mamoru TAMURA · Toyama, JP
Hiroto OGATA · Toyama, JP
Takahiro Kishioka · Toyama, JP

Key dates

Filing date	Sep 19, 2018
Grant date	Apr 25, 2023
Priority date	—
Expiry date	Mar 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31138
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.