Leakage source detection for memory with varying conductive path lengths
US11636911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Jul 28, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.