Non-volatile memory device and method for manufacturing the same
US11637112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A non-volatile memory device and its manufacturing method are provided. The non-volatile memory device includes a substrate and a plurality of first gate structures and a plurality of second gate structures formed on the substrate. The substrate includes a center region and two border regions located on opposite sides of the center region. The center region and two border regions are located in an array region. The first gate structures are located in the center region, and the second gate structures are located in one of the border regions. Each of the first gate structures has a first width, and each of the second gate structures has a second width less than the first width. There is a first spacing between the first gate structures, and there is a second spacing which is greater than the first spacing between the second gate structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.