Methods for resistive RAM (ReRAM) performance stabilization via dry etch clean treatment
US11637242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2020 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Jul 10, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NH3 gases. The dry chemical gas removal process utilizing HF and NH3 gases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.