Patent · US Active

Method for producing a semiconductor wafer composed of monocrystalline silicon

US11639558B2 · kind B2 · utility

0Cited by

4References

6Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Michael Boy · Waging am See, DE
Michael Gehmlich · Bad Birnbach, DE
Andreas Sattler · Trostberg, DE

Key dates

Filing date	Jul 7, 2022
Grant date	May 2, 2023
Priority date	—
Expiry date	Jul 7, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295° C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800° C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300° C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.