Patent · US Active

Semiconductor devices

US11641743B2 · kind B2 · utility

0Cited by
16References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 14, 2021
Grant dateMay 2, 2023
Priority date
Expiry dateOct 14, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure including conductive layers stacked on the substrate. Moreover, the semiconductor device includes a dummy structure penetrating a stepped region of the stack structure. A portion of the dummy structure includes a first segment and a second segment. The first segment extends in a first direction in a plane parallel to an upper surface of the substrate. The second segment protrudes from the first segment in a second direction, in the plane, that intersects the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.