Selective deposition of silicon oxide on metal surfaces
US11643720B2 · kind B2 · utility
2Cited by
101References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Mar 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.