Method to achieve tilted patterning with a through resist thickness using projection optics
US11644757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2019 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Aug 6, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0159
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.