Scanning electron microscope and a method for overlay monitoring
US11646173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Dec 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2448
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scanning electron microscope and a method for evaluating a sample, the method may include (a) illuminating the sample with a primary electron beam, (b) directing secondary electrons emitted from the sample and propagated above a first scintillator, towards an upper portion of the first scintillator, wherein the first scintillator and a second scintillator are positioned between the sample and a column electrode of the column; wherein the first scintillator is positioned above the second scintillator; (c) detecting the secondary electrons by the first scintillator; (d) directing backscattered electrons emitted from the sample towards a lower portion of the second scintillator; and (e) detecting the backscattered electrons by the second scintillator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.