Integration of a III-V construction on a group IV substrate
US11646200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Jun 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a III-V construction over a group IV substrate comprises providing an assembly comprising the group IV substrate and a dielectric thereon. The dielectric layer comprises a trench exposing the group IV substrate. The method further comprises initiating growth of a first III-V structure in the trench, continuing growth out of the trench on top of the bottom part, growing epitaxially a sacrificial second III-V structure on the top part of the first III-V structure, and growing epitaxially a third III-V structure on the sacrificial second III-V structure. The third III-V structure comprises a top III-V layer. The method further comprises physically disconnecting a first part of the top layer from a second part thereof, and contacting the sacrificial second III-V structure with the liquid etching medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.