Thin film formation apparatus and method using plasma
US11646203B2 · kind B2 · utility
0Cited by
6References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 10, 2020 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Mar 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H2) and deuterium (D2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.