Redistribution structure and forming method thereof
US11646259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a forming method of a redistribution structure including: forming a first redistribution layer and a first compensation circuit layer on a substrate, wherein the first compensation circuit layer surrounds the first redistribution layer, and the first compensation circuit layer and the first redistribution layer are electrically insulated from each other; forming a first dielectric layer on the first redistribution layer and the first compensation circuit layer; and forming a second redistribution layer and a second compensation circuit layer on the first dielectric layer, wherein the second compensation circuit layer surrounds the second redistribution layer, the second compensation circuit layer and the second redistribution layer are electrically insulated from each other, the second compensation circuit layer is connected to the first compensation circuit layer, and the second redistribution layer is connected to the first redistribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.