Semiconductor device structure
US11646353B1 · kind B1 · utility
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1References
17Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 27, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Dec 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure includes a substrate, a first gate structure, a second gate structure, a first well region, and a first structure. The substrate has a first surface and a second surface opposite to the first surface. The first gate structure is disposed on the first surface. The second gate structure is disposed on the first surface. The first well region is in the substrate and between the first gate structure and the second gate structure. The first structure is disposed in the first well region. A shape of the first structure has an acute angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.