Ferroelectric thin-film structure and electronic device including the same
US11646375B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Dec 4, 2020 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Dec 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.