Nonvolatile tunable capacitive processing unit
US11647684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | May 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.