Inventor · Potsdam, NY, US

Guy M. Cohen

320Patents
30h-index
202Co-inventors
93Inventor score

Filing activity: Mar 19, 1999 → Aug 19, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6992932B2 Method circuit and system for read error detection in a non-volatile memory array Physics 317 Expired
US8927968B2 Accurate control of distance between suspended semiconductor nanowires and substrate surface Emerging Cross-Sectional Technologies 281 Active
US7446025B2 Method of forming vertical FET with nanowire channels and a silicided bottom contact Emerging Cross-Sectional Technologies 138 Active
US7795677B2 Nanowire field-effect transistors Emerging Cross-Sectional Technologies 138 Active
US6963505B2 Method circuit and system for determining a reference voltage Physics 123 Expired
US6365465B1 Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques Electricity 94 Expired
US7230286B2 Vertical FET with nanowire channels and a silicided bottom contact Emerging Cross-Sectional Technologies 87 Expired
US7125785B2 Mixed orientation and mixed material semiconductor-on-insulator wafer Electricity 85 Expired
US6667528B2 Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same Emerging Cross-Sectional Technologies 69 Expired
US6645861B2 Self-aligned silicide process for silicon sidewall source and drain contacts Electricity 61 Expired
US7033927B2 Apparatus and method for thermal isolation, circuit cooling and electromagnetic shielding of a wafer Electricity 60 Expired
US6642115B1 Double-gate FET with planarized surfaces and self-aligned silicides Electricity 52 Expired
US7136304B2 Method, system and circuit for programming a non-volatile memory array Physics 46 Expired
US6475072B1 Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP) Electricity 45 Expired
US7534675B2 Techniques for fabricating nanowire field-effect transistors Emerging Cross-Sectional Technologies 43 Active
US7101762B2 Self-aligned double gate mosfet with separate gates Electricity 41 Expired
US10076176B2 Vanity mirror comprising light sources and methods of manufacture thereof Mechanical Engineering; Lighting; Heating 41 Active
US7884004B2 Maskless process for suspending and thinning nanowires Emerging Cross-Sectional Technologies 40 Active
US6503833B1 Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby Electricity 40 Expired
US9586755B1 Dual sensing receptacles Emerging Cross-Sectional Technologies 39 Active
US6300218A Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process Electricity 38 Expired
US7060585B1 Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization Electricity 36 Expired
US9856080B2 Containers with multiple sensors Emerging Cross-Sectional Technologies 36 Active
US8399314B2 p-FET with a strained nanowire channel and embedded SiGe source and drain stressors Electricity 35 Active
US8384065B2 Gate-all-around nanowire field effect transistors Electricity 32 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.