Time-dependent defect inspection apparatus
US11651935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Nov 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.