Patent · US Active

Power semiconductor device and method

US11652022B2 · kind B2 · utility

0Cited by

8References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef Schaetz · Neukirchen, DE
Dethard Peters · Edenkoben, DE
Stephan Pindl · Ergoldsbach, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jul 31, 2020
Grant date	May 16, 2023
Priority date	—
Expiry date	Jul 31, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.