Patent · US Active

Concept for silicon for carbide power devices

US11652099B2 · kind B2 · utility

1Cited by
14References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 2022
Grant dateMay 16, 2023
Priority date
Expiry dateJan 17, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/811

Abstract

A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid (4) with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.