Image sensor and manufacturing method of the same
US11652130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Oct 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
An image sensor includes a first layer including pixels in a pixel array, and a first logic circuit configured to control the pixel array. Each of the pixels include at least one photodiode configured to generate a charge in response to light, and a pixel circuit configured to generate a pixel signal corresponding to the charge. A second layer includes a second logic circuit that is connected to the pixel array and the first logic circuit and is on the first layer. A third layer includes storage elements that are electrically connected to at least one of the pixels or the first logic circuit and an insulating layer on the storage elements. A lower surface of the insulating layer is attached to an upper portion of the first layer, and an upper surface of the insulating layer is attached to a lower portion of the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.