Method for producing a superjunction device
US11652138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | May 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device includes forming transistor cells in a semiconductor body, each cell including a drift region separated from a source region by a body region, a gate electrode dielectrically insulated from the body region, and a compensation region of a doping type complementary to the doping type of the drift region and extending from a respective body region into the drift region in a vertical direction. Forming the drift and compensation regions includes performing a first implantation step, thereby implanting first and second type dopant atoms into the semiconductor body, wherein an implantation dose of at least one of the first type dopant atoms and the second type dopant atoms for each of at least two sections of the semiconductor body differs from the implantation dose of the corresponding type of dopant atoms of at least one other section of the at least two sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.