Three-dimensional memory device with source structure and methods for forming the same
US11653495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes the following operations. A cut structure is first formed in a stack structure. The stack structure includes interleaved initial sacrificial layers and initial insulating layers. A patterned cap material layer is formed over the stack structure. The patterned cap material layer includes an opening over the cut structure. Portions of the stack structure and the patterned cap material layer adjacent to the opening are removed to form a slit structure and an initial support structure. The initial support structure divides the slit structure into slit openings. Conductor portions are formed through the plurality of slit openings to form a support structure. A source contact is formed in each slit opening. A connection layer is formed over the source contact in each slit opening and over the support structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.