Patent · US Active

Phase-change memory cell

US11653579B2 · kind B2 · utility

1Cited by

13References

18Claims

0Family size

Inventors

Paolo Cappelletti · Seveso, IT
Gabriele Navarro · Moirans, FR

Key dates

Filing date	Feb 3, 2021
Grant date	May 16, 2023
Priority date	—
Expiry date	Feb 3, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/008
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.